AON7460 데이터 시트보기 (PDF) - Unspecified

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AON7460

300V,4A N-Channel MOSFET

Unspecified 

AON7460

300V,4A N-Channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

BVDSS

/∆TJ

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

ID=250µA, VGS=0V

300

350

0.3

V

V/ oC

IDSS

IGSS

VGS(th)

RDS(ON)

gFS

VSD

IS

ISM

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

VDS=300V, VGS=0V

VDS=240V, TJ=125°C

VDS=0V, VGS=±30V

VDS=5V, ID=250µA

VGS=10V, ID=1.2A

VDS=40V, ID=1.2A

IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

1

µA

10

±100 nΑ

3.3 3.9 4.5

V

0.67 0.83 Ω

2

S

0.76 1

V

4

A

13

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=25V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

240 310 380 pF

30

45

60

pF

3.0

pF

1.4 2.9 4.5

Ω

SWITCHING PARAMETERS

Qg

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge

Gate Source Charge

VGS=10V, VDS=240V, ID=1.2A

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=150V, ID=1.2A,

RG=25Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time IF=1.2A,dI/dt=100A/µs,VDS=100V

Body Diode Reverse Recovery Charge IF=1.2A,dI/dt=100A/µs,VDS=100V

5.4 6.8 8.2 nC

1.9

nC

2.0

nC

17

ns

8

ns

29

ns

12

ns

60

88 120 ns

0.20 0.29 0.40 µC

A. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

Power Dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial

TJ =25°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

H. L=60mH, IAS=2.1A, VDD=150V, RG=10Ω, Starting TJ=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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