AON1606 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AON1606 Datasheet PDF : 5 Pages
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AON1606
20V N-Channel MOSFET
General Description
Product Summary
The AON1606 utilize advanced trench MOSFET
technology in small DFN 1.0 x 0.6 package. This device is
ideal for load switch applications.
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS =2.5V)
RDS(ON) (at VGS =1.8V)
Typical ESD protection
20V
0.7A
< 275mΩ
< 335mΩ
< 390mΩ
HBM Class 1C
DFN 1.0x0.6
Top View
Bottom View
G
S
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current E
TA=25°C
TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±8
0.7
0.55
2.8
0.9
0.55
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
80
110
Maximum Junction-to-Ambient B
Maximum Junction-to-Ambient B
t ≤ 10s
Steady-State
RθJA
200
280
Max
100
140
245
340
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
Rev 0 : Oct. 2012
www.aosmd.com
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