AOW410 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AOW410 Datasheet PDF : 7 Pages
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AOW410
100V N-Channel MOSFET
SDMOS TM
General Description
The AOW410 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge & low Qrr.The result is outstanding efficiency with
controlled switching behavior. This universal technology is
well suited for PWM, load switching and general purpose
applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS= 7V)
100% UIS Tested
100% Rg Tested
100V
150A
< 6.5mΩ
< 7.5mΩ
TO-262
Top View
Bottom View
D
G DS
G
SD
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS,IAR
EAS,EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±25
150
108
405
12
10
50
125
333
167
1.9
1.2
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
54
0.35
Max
15
65
0.45
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: July 2010
www.aosmd.com
Page 1 of 7
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