AOW410 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AOW410 Datasheet PDF : 7 Pages
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AOW410
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
IDSS
Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
10
µA
50
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
100 nA
VGS(th) Gate Threshold Voltage
VDS=5V ,ID=250µA
2
3
4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
405
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
5.1 6.5
mΩ
8.8 11
VGS=7V, ID=20A
5.8 7.5 mΩ
gFS
Forward Transconductance
VDS=5V, ID=20A
70
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.63 1
V
IS
Maximum Body-Diode Continuous Current
150
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
5290 6622 7950 pF
415 594 770 pF
130 215 300 pF
0.3 0.64 1
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
85 107 129 nC
Qgs
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
23 28.5 34 nC
Qgd
Gate Drain Charge
24
40
56
nC
tD(on)
Turn-On DelayTime
28
ns
tr
Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5Ω,
22
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
43.5
ns
tf
Turn-Off Fall Time
14.5
ns
trr
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
19
27
35
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
124 177 230 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: July 2010
www.aosmd.com
Page 2 of 7
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