D2081UK 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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D2081UK Datasheet PDF : 3 Pages
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D2081UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
|D = 10mA
65
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs
Forward Transconductance*
GPS Common Source Power Gain
η
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 750mW
VDS = 12V
f = 1GHz
VDS = 0
VDS = VGS
ID = 0.2A
IDQ = 75mA
1
0.18
11
40
10:1
Ciss Input Capacitance
VDS = 0V VGS = –5V f = 1MHz
Coss Output Capacitance
VDS = 28V VGS = 0 f = 1MHz
Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Typ.
Max. Unit
V
1
mA
1
µA
7
V
mhos
dB
%
—
12
6
pF
0.5
Max. 70°C / W
Freq
MHz
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
S Parameters at Vd = 12V, Id = 75mA
S11
S12
S21
mag ang mag ang mag ang
0.47
-95 0.04
50 5.20
90
0.46 -120 0.05
80 4.40
76
0.47 -131 0.07
100 3.50
68
0.49 -146 0.10
110 3.00
59
0.51 -156 0.15
110 2.60
51
0.53 -163 0.20
104 2.30
45
0.54 -180 0.25
100 2.10
40
0.55 178 0.29
96 1.80
36
0.56 175 0.34
91 1.60
33
0.57 163 0.40
85 1.40
28
0.58 150 0.45
80 1.30
26
0.60 144 0.48
75 1.20
24
0.60 140 0.52
70 1.10
22
0.59 130 0.55
66 1.00
21
0.58 123 0.58
63 0.95
20
0.56 115 0.60
58 0.90
19
0.54 110 0.62
54 0.90
20
0.51 108 0.62
50 0.90
20
S22
mag ang
0.32
-90
0.35
-91
0.38
-94
0.43
-98
0.48 -103
0.54 -108
0.58 -112
0.60 -116
0.63 -120
0.65 -126
0.66 -129
0.66 -133
0.66 -135
0.65 -138
0.65 -140
0.64 -142
0.64 -144
0.63 -145
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
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