AP3302H/J 데이터 시트보기 (PDF) - Advanced Power Electronics Corp
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AP3302H/J Datasheet PDF : 4 Pages
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Advanced Power
Electronics Corp.
AP3302H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching
Description
D
G
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP3302J) is available for low-profile applications.
BVDSS
RDS(ON)
ID
25V
50mΩ
16A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
G
D
S
Rating
25
± 20
16
10
25
20
0.16
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
6.4
110
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200701031
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