EGF1D 데이터 시트보기 (PDF) - Fairchild Semiconductor
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EGF1D Datasheet PDF : 3 Pages
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EGF1A - EGF1D
Features
• Low forward voltage drop.
• Low profile package.
• Fast switching for high efficiency.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
1A
1B 1C 1D
VRRM
Maximum Repetitive Reverse Voltage
50
100 150 200
IF(AV)
Average Rectified Forward Current, @ TL = 100°C
1.0
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Tstg
Storage Temperature Range
TJ
Operating Junction Temperature
30
-65 to +175
-65 to +175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
PD
Power Dissipation
RθJA
Thermal Resistance, Junction to Ambient*
RθJL
Thermal Resistance, Junction to Lead*
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
1A
VF
Forward Voltage @ 1.0 A
trr
Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
IR
Reverse Current @ rated VR
TA = 25°C
TA = 100°C
CT
Total Capacitance
VR = 4.0 V, f = 1.0 MHz
Value
2.0
85
30
Device
1B 1C 1D
1.0
50
10
100
15
Units
V
A
A
°C
°C
Units
W
°C/W
°C/W
Units
V
ns
µA
µA
pF
2001 Fairchild Semiconductor Corporation
EGF1A-EGF1D, Rev. D
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