EGF1D 데이터 시트보기 (PDF) - Fairchild Semiconductor

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EGF1D

Fast Rectifiers (Glass Passivated)

Fairchild Semiconductor 

Typical Characteristics

1.6

1.4

1.2

1

0.8 RESISTIVE OR

INDUCTIVE LOAD

0.6 P.C.B. MOUNTED

ON 0.2 x 0.2"

0.4 (5.0 x 5.0 mm)

COPPER PAD AREAS

0.2

0

0 25 50 75 100 125 150 175

Lead Temperature [ºC]

Figure 1. Forward Current Derating Curve

40

30

100

TJA = 25º C

Pulse Width = 300µS

2% Duty Cycle

10

1

0.1

0.01

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Forward Voltage, VF [V]

Figure 2. Forward Voltage Characteristics

1000

TA = 100º C

100

20

10

TJA = 25º C

10

1

0

1

2

5

10 20

50 100

Number of Cycles at 60Hz

Figure 3. Non-Repetitive Surge Current

0.1

0

20 40 60 80 100 120 140

Percent of Rated Peak Reverse Voltage [%]

Figure 4. Reverse Current vs Reverse Voltage

50Ω

NONINDUCTIVE

60

50

40

30

20

10

0

0.1

0.5 1 2 5 10 20 50 100

500

Reverse Voltage, VR [V]

Figure 5. Total Capacitance

50Ω

NONINDUCTIVE

trr

+0.5A

DUT

50V

(approx)

50Ω

NONINDUCTIVE

(-)

Pulse

Generator

(Note 2)

(+)

OSCILLOSCOPE

(Note 1)

0

-0.25A

NOTES:

1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.

2. Rise time = 10 ns max; Source impedance = 50 ohms.

-1.0A

1.0cm

SET TIME BASE FOR

5/ 10 ns/ cm

Reverse Recovery Time Characterstic and Test Circuit Diagram

2001 Fairchild Semiconductor Corporation

EGF1A-EGF1D, Rev. D

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