MT28F642D18FN-805BET 데이터 시트보기 (PDF) - Micron Technology

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MT28F642D18FN-805BET

FLASH MEMORY

Micron Technology 

ADVANCE

4 MEG x 16

ASYNC/PAGE/BURST FLASH MEMORY

GENERAL DESCRIPTION

The MT28F642D20 and MT28F642D18 are high-

performance, high-density, nonvolatile memory solu-

tions that can significantly improve system

performance. This new architecture features a two-

memory-bank configuration that supports dual-bank

operation with no latency.

A high-performance bus interface allows a fast burst

or page mode data transfer; a conventional asynchro-

nous bus interface is provided as well.

The devices allow soft protection for blocks, as read-

only, by configuring soft protection registers with dedi-

cated command sequences. For security purposes, two

64-bit chip protection registers are provided.

The embedded WORD WRITE and BLOCK ERASE

functions are fully automated by an on-chip write state

machine (WSM). Two on-chip status registers, one for

each of the two memory partitions, can be used to moni-

tor the WSM status and to determine the progress of

the program/erase task.

The erase/program suspend functionality allows

compatibility with existing EEPROM emulation soft-

ware packages.

These devices are manufactured using 0.18µm pro-

cess technology.

Please refer to the Micron Web site (www.micron.com/

flash) for the latest data sheet.

ARCHITECTURE AND MEMORY

ORGANIZATION

The Flash devices contain two separate banks of

memory (bank a and bank b) for simultaneous READ

and WRITE operations, which are available in the fol-

lowing bank segmentation configurations:

• Bank a comprises one-fourth of the memory and

contains 8 x 4K-word parameter blocks and

31 x 32K-word blocks.

• Bank b represents three-fourths of the memory, is

equally sectored, and contains 96 x 32K-word

blocks.

Figures 2 and 3 show the bottom and top memory

organizations.

DEVICE MARKING

Due to the size of the package, Micron’s standard

part number is not printed on the top of each device.

Instead, an abbreviated device mark comprised of a

five-digit alphanumeric code is used. The abbreviated

device marks are cross referenced to the Micron part

numbers in Table 1.

Table 1

Cross Reference for Abbreviated Device Marks

PART NUMBER

MT28F642D20FN-705 TET

MT28F642D20FN-705 BET

MT28F642D20FN-804 TET

MT28F642D20FN-804 BET

MT28F642D18FN-705 TET

MT28F642D18FN-705 BET

MT28F642D18FN-804 TET

MT28F642D18FN-804 BET

PRODUCT

MARKING

FW906

FW905

FW907

FW908

FW909

FW910

FW911

FW912

SAMPLE

MARKING

FX906

FX905

FX907

FX908

FX909

FX910

FX911

FX912

MECHANICAL

SAMPLE MARKING

FY906

FY905

FY907

FY908

FY909

FY910

FY911

FY912

4 Meg x 16 Async/Page/Burst Flash Memory

MT28F642D18_3.p65 – Rev. 3, Pub. 8/02

2

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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