MT28F642D18FN-705BET 데이터 시트보기 (PDF) - Micron Technology

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MT28F642D18FN-705BET

FLASH MEMORY

Micron Technology 

ADVANCE

4 MEG x 16

ASYNC/PAGE/BURST FLASH MEMORY

PART NUMBERING INFORMATION

Micron’s low-power devices are available with sev-

eral different combinations of features (see Figure 1).

Valid combinations of features and their correspond-

ing part numbers are listed in Table 2.

Figure 1

Part Number Chart

MT 28F 642 D20 FN-80 4 B ET

Micron Technology

Flash Family

28F = Dual-Supply Flash

Density/Organization/Banks

642 = 64Mb (4,096K x 16)

bank a = 1/4; bank b = 3/4

Read Mode Operation

D = Asynchronous/Page/Burst Read

Operating Voltage Range

18 = 1.70V–1.90V

20 = 1.80V–2.20V VCC

20 = 1.80V–2.25V VCCQ

Operating Temperature Range

ET = Extended (-40ºC to +85ºC)

Boot Block Starting Address

B = Bottom boot

T = Top boot

Burst Mode Frequency

4 = 40 MHz

5 = 54 MHz

Access Time

-70 = 70ns

-80 = 80ns

Package Code

FN = 59-ball FBGA (8 x 7 grid)

Table 2

Valid Part Number Combinations1

PART NUMBER

MT28F642D20FN-705 TET

MT28F642D20FN-705 BET

MT28F642D20FN-804 TET

MT28F642D20FN-804 BET

MT28F642D18FN-705 TET

MT28F642D18FN-705 BET

MT28F642D18FN-804 TET

MT28F642D18FN-804 BET

ACCESS

TIME (ns)

70

70

80

80

70

70

80

80

BOOT BLOCK

STARTING

ADDRESS

Top

Bottom

Top

Bottom

Top

Bottom

Top

Bottom

BURST

FREQUENCY

(MHz)

54

54

40

40

54

54

40

40

OPERATING

TEMPERATURE

RANGE

-40oC to +85oC

-40oC to +85oC

-40oC to +85oC

-40oC to +85oC

-40oC to +85oC

-40oC to +85oC

-40oC to +85oC

-40oC to +85oC

NOTE: 1. For part number combinations not listed in this table, please contact your Micron

representative.

4 Meg x 16 Async/Page/Burst Flash Memory

MT28F642D18_3.p65 – Rev. 3, Pub. 8/02

3

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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