ARF1519 데이터 시트보기 (PDF) - Microsemi Corporation
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ARF1519 Datasheet PDF : 4 Pages
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DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss
Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 150V
f = 1 MHz
ARF1519
MIN TYP MAX UNIT
4600 5600
310 350 pF
90 120
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
GPS Common Source Amplifier Power Gain
η
Drain Efficiency
Ψ
Electrical Ruggedness VSWR 10:1
f = 13.56MHz
VGS = 0V VDD = 200V
Pout = 750W
17
20
dB
70
75
%
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
Ciss
60
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
50
@ <0.5 % DUTY CYCLE
TJ = -55°C
40
Coss
30
Crss
.1
1
10
100 200
Figure V1,DTSy, pDiRcaAlINC-aTpOa-cSitOaUncReCvEsV. DOrLaTiAnG-toE-S(VoOuLrcTeS)Voltage
20
10
TJ = +25°C
TJ = +125°C
0
0 1 2 3 4 5 67
VFGiSg,uGreAT2,ET-TyOpi-cSaOl UTrRaCnsEfeVrOCLhTAarGaEct(eVriOsLtiTcSs)
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