AS7C31025C 데이터 시트보기 (PDF) - Alliance Semiconductor

부품명

상세내역

제조사

AS7C31025C

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Alliance Semiconductor 

AS7C31025C

®

Recommended operating conditions

Parameter

Symbol

Supply voltage

VCC

Input voltage

VIH

VIL

Ambient operating temperature (Industrial)

TA

VIL min = –2.0V for pulse width less than 5ns, once per cycle.

VIH min = –VCC + 2.0V for pulse width less than 5ns, once per cycle.

Min

Nominal

Max

Unit

3.0

3.3

3.6

V

2.0

–

VCC + 0.3

V

–0.5

–

0.8

V

–40

–

85

oC

DC operating characteristics (over the operating range)1

Parameter

Input leakage current

Output leakage current

Operating power supply current

Standby power supply current1

Output voltage

Sym

| ILI |

| ILO |

ICC

ISB

ISB1

VOL

VOH

Test conditions

VCC = Max, VIN = GND to VCC

VCC = Max, CE = VIH,

Vout = GND to VCC

VCC = Max

CE ≤ VIL, f = fMax,

IOUT = 0 mA

VCC = Max

CE ≥ VIH, f = fMax

VCC = Max, CE ≥ VCC–0.2 V,

VIN ≤ 0.2 V or VIN ≥ VCC –0.2 V,

f=0

IOL = 8 mA, VCC = Min

IOH = –4 mA, VCC = Min

AS7C31025C-10

Min Max Unit

–

5

μA

–

5

μA

–

150 mA

–

50

mA

–

10 mA

–

0.4

V

2.4

–

V

Capacitance (f = 1 MHz, Ta = 25o C, VCC = NOMINAL)2

Parameter

Symbol

Signals

Test conditions

Max

Unit

Input capacitance

CIN

A, CE, WE, OE

VIN = 3dV

I/O capacitance

CI/O

I/O

VOUT = 3dV

Note:

1. This parameter is guaranteed by device characterization, but is not production tested.

6

pF

7

pF

9/20/06, v. 1.0

Alliance Memory

P. 3 of 9

Share Link: