AS8ER128K32QB-250/883C(2003) 데이터 시트보기 (PDF) - Austin Semiconductor

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AS8ER128K32QB-250/883C
(Rev.:2003)

128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array

Austin Semiconductor 

Austin Semiconductor, Inc.

EEPROM

AS8ER128K32

TOGGLE BIT

This device provides another function to determine the internal programming cycle. If the EEPROM is set to read mode

during the internal programming cycle, I/O6 will charge from "1" to "0" (toggling) for each read. When the internal pro-

gramming cycle is finished, toggling of I/O6 will stop and the device can be accessible for next read or program.

Address

CE\

TOGGLE BIT WAVEFORM

tCE3

4Next Mode

End WE\

OE\

I/O6

tOE3

tOEH

Din

Dout1

OfDout

tWC

NOTES:

1) I/O6 beginning state is "1".

2) I/O6 ending state will vary.

3) See AC read characteristics.

4) Any locations can be used, but the address must be fixed.

tOES

Life Dout2

Dout2

tDW

SOFTWARE DATA PROTECTION TIMING WAVEFORM (In protection mode)

VCC

CE\

WE\

tBLC

tBLC

tBLC

tWC

Address

Data (each byte)

5555

AA

AAAA or

2AAA

55

5555

A0

Write Address*

Write Data

* During this write cycle, data is physically written to the address provided.

AS8ER128K32

Rev. 4.5 2/03

10

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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