ASD501V 데이터 시트보기 (PDF) - Formosa Technology

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ASD501V

Advanced Schottky Barrier Diodes

Formosa Technology 

Advanced Schottky Barrier Diodes

ASD501V

Surface mount small signal type

Extermely thin package

Low stored charge

Majority carrier conduction

Formosa MS

R0.3 (0.012) Typ.

0.087 (2.2)

0.071 (1.8)

0.012(0.3) Typ.

0.055 (1.4)

0.039 (1.0)

Mechanical data

Case : Molded plastic, 0805

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by cathode band

Mounting Position : Any

Weight : 0.000159 ounce, 0.0045 gram

0.043 (1.1)

0.028 (0.7)

0805

MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)

PARAMETER

CONDITIONS

Symbol MIN.

Repetitive peak reverse voltage

VRM

Continuous reverse voltage

VR

Mean rectifying current

IO

Forward surge current

8.3ms single half sine-wave superimposed on

IFSM

rate load (JEDEC methode)

Capacitance between terminals

Storage temperature

Operating temperature

f=1MHz and applied 10VDC reverse voltage

CT

TJ

-40

TSTG

-40

TYP.

20

MAX.

45

40

100

1000

+125

+125

UNIT

V

V

mA

mA

pF

oC

oC

ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)

PARAMETER

CONDITIONS

Symbol MIN. TYP. MAX. UNIT

Forward voltage

IF = 100 mA DC

VF

0.55

V

Reverse current

VR = 10 V DC

IR

30

uA

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