ASD751V-N 데이터 시트보기 (PDF) - Formosa Technology

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ASD751V-N

Advanced Schottky Barrier Diodes

Formosa Technology 

Advanced Schottky Barrier Diodes

ASD751V-N

Surface mount small signal type

Features

Extermely low VF

Extermely thin package

Low stored charge

Majority carrier conduction

Mechanical data

Case : Molded plastic, JEDEC SOD-323

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by cathode band

Mounting Position : Any

Weight : 0.000159 ounce, 0.0045 gram

Formosa MS

R0.5 (0.02) Typ.

0.106 (2.7)

0.090 (2.3)

0.012(0.3) Typ.

0.053 (1.35)

0.045 (1.15)

0.035 (0.9)

0.028 (0.7)

SOD-323

MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)

PARAMETER

CONDITIONS

Repetitive peak reverse voltage

Continuous reverse voltage

Mean rectifying current

Forward surge current

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Capacitance between terminals

Storage temperature

Operating temperature

f=1MHz and applied 10VDC reverse voltage

Symbol

VRM

VR

IO

MIN.

TYP.

MAX.

40

30

30

UNIT

V

V

mA

IFSM

200

mA

CT

TJ

-40

TSTG

-40

20

pF

+125

oC

+125

oC

ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)

PARAMETER

CONDITIONS

Symbol MIN. TYP. MAX. UNIT

Forward voltage

IF = 1.0 mA DC

VF

0.26 0.37

V

Reverse current

VR = 30 V DC

IR

0.17 0.5

uA

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