AT-41532 데이터 시트보기 (PDF) - HP => Agilent Technologies
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AT-41532 Datasheet PDF : 15 Pages
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General Purpose, Low Current
NPN Silicon Bipolar Transistor
Technical Data
AT-41532
Features
• General Purpose NPN
Bipolar Transistor
Optimized for Low Current,
Low Voltage Applications at
900 MHz, 1.8 GHz, and
2.4 GHz
• Performance (5 V, 5 mA)
0.9 GHz: 1 dB NF, 15.5 dB GA
1.8 GHz: 1.4 dB NF, 10.5 dB GA
2.4 GHz: 1.9 dB NF, 9 dB GA
• Characterized for 3, 5, and
8 V Use
• Miniature 3-lead SOT-323
(SC-70) Plastic Package
• High Breakdown Voltage
(can be operated up to 10 V)
3-Lead SC-70 (SOT-323)
Surface Mount Plastic
Package
Pin Configuration
COLLECTOR
41
Applications
• LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
• LNA, Oscillator, Mixer, and
Gain Amplifier for Pagers
• Power Amplifier and
Oscillator for RF-ID Tag
• LNA and Gain Amplifier for
GPS
• LNA for CATV Set-Top Box
BASE EMITTER
Description
Agilent’s AT-41532 is a general
purpose NPN bipolar transistor
that has been optimized for
maximum ft at low voltage
operation, making it ideal for use
in battery powered
applications in cellular/PCS
and other wireless markets.
The AT-41532 uses the miniature
3-lead SOT-323 (SC-70) plastic
package.
Optimized performance at 5 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
systems. Typical amplifier design
at 900 MHz yields 1 dB NF and
15.5 dB associated gain at 5 V and
5 mA bias. High gain capability at
1 V and 1 mA makes this device a
good fit for 900 MHz pager
applications. A good noise
match near 50 ohms at 900 MHz
makes this a very user-friendly
device. Moreover, voltage
breakdowns are high enough to
support operation at 10 V.
The AT-41532 belongs to Agilent’s
AT-4XXXX series bipolar
transistors. It exhibits excellent
device uniformity, performance,
and reliability as a result of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication process.
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