AT-41532-TR2 데이터 시트보기 (PDF) - HP => Agilent Technologies

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AT-41532-TR2

General Purpose, Low Current NPN Silicon Bipolar Transistor

HP => Agilent Technologies 

2

AT-41532 Absolute Maximum Ratings

Symbol

VEBO

VCBO

VCEO

IC

PT

Tj

TSTG

Parameter

Emitter-Base Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Power Dissipation[2,3]

Junction Temperature

Storage Temperature

Units

V

V

V

mA

mW

°C

°C

Absolute

Maximum[1]

1.5

20

12

50

225

150

-65 to 150

Thermal Resistance:[2]

θjc = 350°C/W

Notes:

1. Operation of this device above any one

of these parameters may cause

permanent damage.

2. TMOUNTING SURFACE = 25°C.

3. Derate at 2.86 mW/°C for

TMOUNTING SURFACE > 72°C.

Electrical Specifications, TA = 25°C

Symbol

Parameters and Test Conditions

Units

Min

hFE

Forward Current Transfer Ratio VCE = 5 V

-

30

IC = 5 mA

ICBO

Collector Cutoff Current

VCB = 3 V

mA

IEBO

Emitter Cutoff Current

VEB = 1 V

mA

Typ

Max

150

270

0.2

1.0

Characterization Information, TA = 25°C

Symbol

Parameters and Test Conditions

Units Min

NF Noise Figure

f = 0.9 GHz dB

f = 1.8 GHz

VCE = 5 V, IC = 5 mA

f = 2.4 GHz

GA Associated Gain

VCE = 5 V, IC = 5 mA

f = 0.9 GHz dB

f = 1.8 GHz

f = 2.4 GHz

P1dB Power at 1 dB Gain Compression (opt tuning) f = 0.9 GHz dBm

VCE = 5 V, IC = 25 mA

G1dB Gain at 1 dB Gain Compression (opt tuning) f = 0.9 GHz

dB

VCE = 5 V, IC = 25 mA

IP3 Output Third Order Intercept Point,

VCE = 5 V, IC =25 mA (opt tuning)

f = 0.9 GHz dBm

|S21E|2 Gain in 50 Ω system; VCE = 5 V, IC = 5 mA

f = 0.9 GHz dB

12.5

f = 2.4 GHz

Typ

1.0

1.4

1.9

15.5

10.5

9.0

14.5

14.5

25

13.25

5.2

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