AT-41485(1999) 데이터 시트보기 (PDF) - HP => Agilent Technologies
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AT-41485 Datasheet PDF : 6 Pages
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2
AT-41485 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
1.5
20
12
60
500
150
-65 to 150
Thermal Resistance[2,4]:
θjc = 155°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.5 mW/°C for TC > 73°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
|S21E|2 Insertion Power Gain; VCE = 8 V, IC = 25 mA
P1 dB
G1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 25 mA
1 dB Compressed Gain; VCE = 8 V, IC = 25 mA
f = 1.0 GHz
f = 2.0 GHz
f = 2.0 GHz
Units
dB
dBm
Min.
Typ.
17.5
11.5
18.5
Max.
f = 2.0 GHz dB
14.0
NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 1.0 GHz dB
f = 2.0 GHz
f = 4.0 GHz
1.4 1.8
1.7
3.0
f = 1.0 GHz dB 17.5 18.5
f = 2.0 GHz
13.5
f = 4.0 GHz
9.5
fT
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA
ICBO Collector Cutoff Current; VCB = 8 V
IEBO Emitter Cutoff Current; VEB = 1 V
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
GHz
8.0
— 30 150 270
µA
0.2
µA
1.0
pF
0.25
Notes:
1. For this test, the emitter is grounded.
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