AT-42086-TR1 데이터 시트보기 (PDF) - HP => Agilent Technologies
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AT-42086-TR1 Datasheet PDF : 6 Pages
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2
AT-42086 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
1.5
20
12
80
500
150
-65 to 150
Thermal Resistance[2,4]:
θjc = 140°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.1 mW/°C for TC > 80°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Part Number Ordering Information
Part Number
Increment
Comments
AT-42086-BLK
100
Bulk
AT-42086-TR1
1000
Reel
Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
|S21E|2 Insertion Power Gain; VCE = 8 V, IC = 35 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Units
dB
Min.
15.0
Typ.
16.5
10.5
4.5
Max.
P1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 35 mA
f = 2.0 GHz dBm
20.5
f= 4.0 GHz
20.0
G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz dB
13.5
f = 4.0 GHz
9.0
NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 2.0 GHz dB
1.9
f = 4.0 GHz
3.5
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz dB
13.0
f = 4.0 GHz
9.0
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
ICBO Collector Cutoff Current; VCB = 8 V
IEBO Emitter Cutoff Current; VEB = 1 V
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
GHz
8.0
— 30 150 270
µA
0.2
µA
2.0
pF
0.32
Note:
1. For this test, the emitter is grounded.
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