AT25F512B-MAH-B 데이터 시트보기 (PDF) - Atmel Corporation

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AT25F512B-MAH-B

512-Kilobit 2.7-volt Minimum SPI Serial Flash Memory

Atmel Corporation 

4. Memory Array

To provide the greatest flexibility, the memory array of the AT25F512B can be erased in three

levels of granularity including a full chip erase. The size of the erase blocks is optimized for both

code and data storage applications, allowing both code and data segments to reside in their own

erase regions. The Memory Architecture Diagram illustrates the breakdown of each erase level.

Figure 4-1. Memory Architecture Diagram

4 AT25F512B [Preliminary]

3689C–DFLASH–12/08

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