AT28C010-W 데이터 시트보기 (PDF) - Atmel Corporation
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AT28C010-W Datasheet PDF : 11 Pages
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Device Operation (Continued)
DEVICE IDENTIFICATION: A n e x t r a 1 2 8 - byt es of
E2PROM memory are available to the user for device
identification. By raising A9 to 12V ± 0.5V and using ad-
dress locations 1FF80H to 1FFFFH the bytes may be writ-
ten to or read from in the same manner as the regular
memory array.
OPTIONAL CHIP ERASE MODE: The entire device can
be erased using a 6-byte software code. Please see Soft-
ware Chip Erase application note for details.
DC and AC Operating Range
Operating
Temperature (Case)
Mil.
VCC Power Supply
AT28C010-12
-55°C - 125°C
5V ± 10%
AT28C010-15
-55°C - 125°C
5V ± 10%
AT28C010-20
-55°C - 125°C
5V ± 10%
AT28C010-25
-55°C - 125°C
5V ± 10%
Operating Modes
Mode
CE
Read
VIL
Write (2)
VIL
Standby/Write Inhibit
VIH
Write Inhibit
X
Write Inhibit
X
Output Disable
X
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
OE
VIL
VIH
X (1)
X
VIL
VIH
WE
I/O
VIH
DOUT
VIL
DIN
X
High Z
VIH
X
X
High Z
DC Characteristics
Symbol Parameter
Condition
Min
ILI
Input Load Current
VIN = 0V to VCC + 1V
ILO
Output Leakage Current
VI/O = 0V to VCC
ISB1
VCC Standby Current CMOS CE = VCC - 0.3V to VCC + 1V
ISB2
VCC Standby Current TTL
CE = 2.0V to VCC + 1V
ICC
VCC Active Current
f = 5 MHz; IOUT = 0 mA
VIL
Input Low Voltage
VIH
Input High Voltage
2.0
VOL
Output Low Voltage
IOL = 2.1 mA
VOH1
Output High Voltage
IOH = -400 µA
2.4
VOH2
Output High Voltage CMOS IOH = -100 µA; VCC = 4.5V
4.2
2-246
AT28C010 Mil
Max
Units
10
µA
10
µA
300
µA
3
mA
80
mA
0.8
V
V
.45
V
V
V
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