AT28C040-20BI 데이터 시트보기 (PDF) - Atmel Corporation

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AT28C040-20BI

4-Megabit (512K x 8) Paged E2PROM

Atmel Corporation 

Features

• Read Access Time - 200 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 256 Bytes

– Internal Control Timer

• Fast Write Cycle Time

– Page Write Cycle Time - 10 ms Maximum

– 1 to 256 Byte Page Write Operation

• Low Power Dissipation

– 80 mA Active Current

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 10,000 Cycles

– Data Retention: 10 Years

• Single 5V ± 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-Wide Pinout

Description

The AT28C040 is a high-performance electrically erasable and programmable read

only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device

offers access times to 200 ns with power dissipation of just 440 mW.

(continued)

Pin Configurations

Pin Name

A0 - A18

CE

OE

WE

I/O0 - I/O7

NC

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

LCC

Top View

SIDE BRAZE,

FLATPACK

Top View

4-Megabit

(512K x 8)

Paged E2PROM

AT28C040

AT28C040 4-

Megabit (512K x

8) Paged

E2PROM

Rev. 0542B–04/98

1

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