ATF-13100-GP3 데이터 시트보기 (PDF) - HP => Agilent Technologies
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ATF-13100-GP3 Datasheet PDF : 3 Pages
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ATF-13100 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
+5
-4
-6
IDSS
225
175
-65 to +175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 250°C/W; TCH = 150°C
1 µm Spot Size[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMOUNTING SURFACE = 25°C.
3. Derate at 4 mW/°C for
TMOUNTING SURFACE > 119°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
Part Number Ordering Information
Part Number
Devices Per Tray
ATF-13100-GP3
50
ATF-13100 Noise Parameters: VDS = 2.5 V, IDS = 20 mA
Freq.
GHz
NFO
dB
Γopt
Mag
Ang
RN/50
4.0
0.4
0.60
30
0.32
6.0
0.7
0.32
68
0.21
8.0
0.8
0.25
102
0.15
12.0
1.1
0.23
-165
0.09
16.0
1.5
0.32
-112
0.21
ATF-13100 Typical Performance, TA = 25°C
2.0
20
12
GA
1.5
15
10
GA
8
1.0
10
4.0
6
NFO
0.5
3.0
5
NFO
2.0
0
0
2.0
4.0 6.0 8.0 10.0 12.0 16.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2.5V, IDS = 20 mA, TA = 25°C.
1.0
0 5 10 15 20 25 30 35
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 2.5V, f = 12.0 GHz.
5-34
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