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ATF-35143-TR1 데이터 시트보기 (PDF) - HP => Agilent Technologies

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ATF-35143-TR1 Datasheet PDF : 19 Pages
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ATF-35143 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
IDS
Pdiss
Pin max
TCH
TSTG
θjc
Parameter
Drain - Source Voltage[2]
Gate - Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
Total Power Dissipation[4]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance[5]
Units
V
V
V
mA
mW
dBm
°C
°C
° C/W
Absolute
Maximum
5.5
-5
-5
Idss[3]
300
14
160
-65 to 160
310
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0 V
4. Source lead temperature is 25°C.
Derate 3.2␣ mW/ °C for TL > 67°C.
5. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
120
+0.6 V
100
80
0V
60
40
–0.6 V
20
0
0
2
4
6
8
VDS (V)
Figure 1. Typical Pulsed I-V Curves [6].
(VGS = -0.2 V per step)
Product Consistency Distribution Charts [7, 8]
120
Cpk = 1.73
Std = 0.35
100
80
-3 Std
60
+3 Std
40
20
0
19
20
21 22 23 24
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA.
LSL=19.0, Nominal=20.9, USL=23.0
200
160
120
-3 Std
80
40
+3 Std
Cpk = 3.7
Std = 0.03
160
Cpk = 2.75
Std = 0.17
120
-3 Std +3 Std
80
40
0
0.2 0.3 0.4 0.5 0.6 0.7
NF (dB)
Figure 3. NF @ 2 GHz, 2 V, 15 mA.
LSL=0.2, Nominal=0.37, USL=0.7
0
16
17
18
19
20
GAIN (dB)
Figure 4. Gain @ 2 GHz, 2 V, 15 mA.
LSL=16.5, Nominal=18.0, USL=19.5
Notes:
6. Under large signal conditions, VGS may
swing positive and the drain current may
exceed Idss. These conditions are
acceptable as long as the maximum Pdiss
and Pin max ratings are not exceeded.
7. Distribution data sample size is 450
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
8. Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production test
requirements. Circuit losses have been de-
embedded from actual measurements.
2

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