ATF-33143 데이터 시트보기 (PDF) - Avago Technologies
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ATF-33143 Datasheet PDF : 17 Pages
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ATF-33143 Typical Performance Curves, continued
1.5
80 mA
60 mA
1.0
0.5
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and Current at 4V.
25
2.0
25C
-40C
85C
20
1.5
15
1.0
10
0.5
30
80 mA
25
60 mA
20
15
10
5
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 13. Associated Gain vs. Frequency and
Current at 4V.
40
25C
-40C
85C
35
30
25
20
5
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency and Temp at
VDS = 4V, IDS = 80 mA.
15
0
2000 4000 6000 8000
FREQUENCY (MHz)
Figure 15. P1dB, OIP3 vs. Frequency and Temp at
VDS = 4V, IDS = 80 mA.
35
3.5
35
30
P1dB 3.0
30
3
OIP3
25
Gain 2.5
25
NF
20
2.0
20
2
15
1.5
15
10
1.0
10
1
5
0.5
0
0
0 20 40 60 80 100 120
5
P1dB
Gain
OIP3
NF
0
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1,2] at
3.9 GHz.
IDSQ (mA)
Figure 17. OIP3, P1dB, NF and Gain vs. Bias[1,2] at
5.8 GHz.
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off between
optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-
embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches P1dB. This results in higher
P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing.
5
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