AU5790 데이터 시트보기 (PDF) - Philips Electronics
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AU5790 Datasheet PDF : 20 Pages
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Philips Semiconductors
Single wire CAN transceiver
Product data
AU5790
Dynamic (AC) CHARACTERISTICS for 33 kbps operation
–40 °C < Tamb < +125 °C; 5.5 V < VBAT < 16 V; –0.3 V < VTxD < 5.5 V; –0.3 V < VNSTB < 5.5 V; –0.3 V < VEN < 5.5 V; –0.3 V < VRxD < 5.5 V;
–1 V < VCANH < +16 V; bus load resistor at pin RTH: 2 kΩ < RT < 9.2 kΩ; total bus load resistance 270 Ω < RL < 9.2 kΩ;
CL < 13.7 nF; 1µs < RL ∗ CL < 4µs; RxD pull-up resistor 2.2 kΩ < Rd < 3.0 kΩ; RxD: loaded with CLR < 30pF to GND;
all voltages are referenced to pin 8 (GND); positive currents flow into the IC;
typical values reflect the approximate average value at VBAT = 13 V and Tamb = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pin CANH
VdBAMN
CANH harmonic content in
normal mode
VdBAMW
CANH harmonic content in
wake-up mode
NSTB = 5 V, EN = 5 V;
RL = 270 Ω, CL = 15 nF;
fTxD = 20 kHz, 50% duty cycle;
8 V < VBAT< 16 V;
0.53 MHz < f < 1.7 MHz, Note 2
NSTB = 5 V, EN = 0 V;
RL = 270 Ω, CL = 15 nF;
fTxD = 20 kHz, 50% duty cycle;
8 V < VBAT< 16 V;
0.53 MHz < f < 1.7 MHz, Note 2
70
dBµV
80
dBµV
Pins NSTB, EN
tNH
Normal mode to high-speed mode
delay
tHN
High-speed mode to normal mode
delay
tWN
Wake-up mode to normal mode 8 V < VBAT < 16 V
delay
tNS
tSN
Pin TxD
Normal mode to sleep mode delay
Sleep mode to normal mode delay
tTrN
tTfN
tTrW
tTrW-S
tTfW-3.6
tTfW-4.0
Transmit delay in normal mode, NSTB = 5 V, EN = 5 V;
3
bus rising edge
RL = 270 Ω, CL = 15 nF;
5.5 V < VBAT < 27 V;
measured from the falling edge on
TxD to VCANH = 3.0 V
Transmit delay in normal mode, NSTB = 5 V, EN = 5 V;
3
bus falling edge
RL = 270 Ω, CL = 15 nF;
5.5 V < VBAT< 27 V;
measured from the rising edge on
TxD to VCANH = 1.0 V
Transmit delay in wake-up mode, NSTB = 0 V, EN = 5 V;
3
bus rising edge to normal levels
RL = 270 Ω, CL = 15 nF;
5.5 V < VBAT < 27 V;
measured from the falling edge on
TxD to VCANH = 3.0 V
Transmit delay in wake-up mode, NSTB = 0 V, EN = 5 V;
3
bus rising edge to wake-up level
RL = 270 Ω, CL = 15 nF;
11.3 V < VBAT < 27 V;
measured from the falling edge on
TxD to VCANH = 8.9 V
Transmit delay in wake-up mode, NSTB = 0 V, EN = 5 V;
3
bus falling edge with 3.6 µs time
constant
RL = 270 Ω, CL = 13.3 nF;
5.5 V < VBAT < 27 V;
measured from the rising edge on
TxD to VCANH = 1 V, Note 2
Transmit delay in wake-up mode, NSTB = 0 V, EN = 5 V;
3
bus falling edge with 4.0 µs time
constant
RL = 270 Ω, CL = 15 nF;
5.5 V < VBAT < 27 V;
measured from the rising edge on
TxD to VCANH = 1 V
30
µs
30
µs
30
µs
500
µs
50
µs
6.3
µs
9
µs
6.3
µs
18
µs
12.7
µs
13.7
µs
2001 May 18
9
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