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AWT6108 데이터 시트보기 (PDF) - ANADIGICS

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AWT6108 Datasheet PDF : 12 Pages
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AWT6108
Table 6: Electrical Characteristics for GSM850/900
(VBATT = 3.5 V, VREG = 2.8 V, PIN = 2.0 dBm, Pulse Width = 1154 µs, Duty 25%,
ZIN = ZOUT = 50W, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (FO)
824
880
-
-
849
915
MHz
Input Power
0
2
5
dBm
Output Power (PMAX)
34.5 35
-
dBm Freq = 824 to 915 MHz
Degraded Output Power
32.0 32.5
-
dBm
VBATT = 3.0 V, TC = 85 °C,
VREG = 2.7 V, PIN = 0 dBm
PAE @ PMAX
48
55
-
% Freq = 824 to 915 MHz
Forward Isolation 1
-
-37
-30
dBm TX_EN = LOW, PIN = 5 dBm
Forward Isolation 2
-
-25
-10
dBm
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Cross Isolation
(2FO @ DCS/PCS port)
-
-30
-20
dBm VRAMP = 0.2 V to VRAMP_MAX
Harmonics
2fo
3fo
-
-
-17
-5
-30
-15
dBm Over all output power levels
Stability
VSWR = 8:1 all phases,
POUT < 34.5 dBm
-
-
-
-
-36
-30
dBm
FOUT < 1GHz
FOUT > 1GHz
Ruggedness
-
-
10:1
All load phases, POUT < 34.5 dBm
FTX = 849 MHz, RBW = 100 kHz,
-
-86
-83
dBm FRX = 869 to 894 MHz,
POUT < 34.5 dBm
RX Noise Power
FTX = 915 MHz, RBW = 100 kHz,
-
-81 -77
dBm FRX = 925 to 935 MHz,
POUT < 34.5 dBm
FTX = 915 MHz, RBW = 100 kHz,
-
-86
-83
dBm FRX = 935 to 960 MHz,
POUT < 34.5 dBm
Input VSWR
-
-
2.5:1
Over all output power levels
PRELIMINARY DATA SHEET - Rev 1.0
5
08/2003

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