AWT6166RM15P8 데이터 시트보기 (PDF) - ANADIGICS

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AWT6166RM15P8

GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control

ANADIGICS 

AWT6166R

Table 7: Electrical Characteristics for GSM900

Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,

ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)

PARAMETER

MIN TYP MAX UNIT

COMMENTS

Operating Frequency (FO)

880

-

915

MHz

Input Power

0

3.0

5

dBm

Output Power, PMAX

34.5 35.0

-

dBm Freq = 880 to 915 MHz

Degraded Output Power

32.5 33.5

-

dBm

VBATT = 3.0 V, TC = 85 °C,

PIN = 0 dBm

PAE @ PMAX

50

55

-

% Freq = 880 to 915MHz

Forward Isolation 1

-

-38

-33

dBm

TX_EN = LOW, VRAMP = 0.2 V

PIN = 5 dBm

Forward Isolation 2

-

-25

-20

dBm

TX_EN = HIGH, VRAMP = 0.2 V,

PIN = 5 dBm

Cross Isolation

(Coupling of GSM 2fo and 3fo to

-

-23

-17

dBm POUT ≤ 34.5 dBm

DCS/PCS port)

Harmonics

2fo, 3fo

-

n*FO, (n ≥ 4), FO ≤ 12.75 GHz

-

-22

-10

-30

-10

dBm POUT ≤ 34.5 dBm

VSWR = 8:1 All Phases, POUT ≤ 34.5 dBm

Stability

-

-

-36

dBm FOUT < 1 GHz

-

-

-30

dBm FOUT > 1 GHz

Ruggedness

-

-

10:1

VSWR

All load phases,

POUT ≤ 34.5 dBm

RX Noise Power

FTX = 915 MHz,

-

-84

-77

dBm

RBW = 100 kHz,

FRX = 925 to 935 MHz,

POUT ≤ 34.5 dBm

FTX = 915 MHz,

-

-87

-83

dBm

RBW = 100 kHz,

FRX = 935 to 960MHz,

POUT ≤ 34.5 dBm

Input VSWR

-

1.5:1 2.5:1

-

POUT ≤ 34.5 dBm

Data Sheet - Rev 2.0

7

02/2006

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