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AWT6168

GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control

ANADIGICS 

AWT6168

GSM/GPRS/Polar EDGE Power Amplifier

Module with Integrated Power Control

ADVANCED PRODUCT INFORMATION - REV 0.1

FEATURES

• Internal Reference Voltage

• Integrated Power Control Scheme

• InGaP HBT Technology

• ESD Protection on All Pins (2.5 kV)

• Low profile 1.3 mm

• Small Package Outline 7 mm x 7 mm

• EGPRS Capable (class 12)

GMSK MODE

• Integrated power control (CMOS)

• +35 dBm GSM850/900 Output Power

• +33 dBm DCS/PCS Output Power

• 55 % GSM850/900 PAE

• 50 % DCS/PCS PAE

• Power control range > 50 dB

EDGE MODE

• +30.5 dBm GSM850/900 Output Power

• +29.5 dBm DCS/PCS Output Power

• 25 % GSM850/900 PAE

• 25 % DCS/PCS PAE

APPLICATIONS

• GSM850/GSM900/DCS/PCS Handsets

• Dual/Tri/Quad Band PDA

• GMSK and 8-PSK Polar Modulation

Schemes

DCS/PCS_IN

DCS/PCS

PRODUCT DESCRIPTION

This power amplifier module supports dual, tri and

quad band applications for GMSK and 8-PSK modu-

lation schemes using a polar architecture. There are

two amplifier chains, one to support GSM850/900

bands, the other for DCS/PCS bands.

The module includes an internal reference voltage

and integrated power control scheme for use in both

GMSK and 8-PSK operation. This facilitates fast and

easy production calibration and reduces the num-

ber of external components required to complete a

power control function. The amplifier’s power con-

trol range is typically 55 dB, with the output power set

by applying an analog voltage to VRAMP.

All of the RF ports for this device are internally

matched to 50 Ω . Internal DC blocks are provided at

the RF inputs.

DCS/PCS_OUT

BS

TX_EN

VBATT

CEXT

VRAMP

Bias/Power

Control

GSM850/900_IN

GSM850/900

Figure 1: Block Diagram

01/2005

GSM850/900_OUT

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