AWT6172 데이터 시트보기 (PDF) - ANADIGICS

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AWT6172

GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

ANADIGICS 

AWT6172

Table 10: Electrical Characteristics for GSM900 EDGE Mode

Unless otherwise specified: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%

ZIN = ZOUT = 50Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VMODE = HIGH

ParaMeter

MIN tYP MaX uNIt

COMMeNts

Operating Frequency ( Fo )

880

-

915 MHz

Linear POUT (High Power Mode) 28.5 -

Linear POUT (Low Power Mode) 20

-

-

-

dBm

VBIAS = High

VBIAS = Low

Linear Degraded Output Power

LD_POUT (High Power Mode) (1) 26

-

LD_POUT (Low Power Mode) (2) 17.5

-

Meets ACPR and EVM limits specified

-

-

dBm under nominal conditions

Linear Gain (High Power Mode) 29.0 32.0 34.0 dB VBIAS = High

Linear Gain (Low Power Mode) 24 29.0 34

dB VBIAS = Low

Gain Variation

- -0.015 - dB/oC -20 oC  TC  +85 oC

Power-Added Efficiency

-

22

-

% POUT = 28.5 dBm

Icq (Low Power Mode)

-

100

-

mA VBIAS = Low

Error Vector Magnitude (EVM)

-

2

5

%

Linearity

ACPR1

ACPR2

ACPR3

POUT < 28.5 dBm, BW = 30 kHz

-

-

-36

-67

-33

-58

dBc

Fo 200 kHz

Fo 400 kHz

-

-79 -64

Fo 600 kHz

Cross Isolation

Fo @ DCS/PCS port

2Fo, 3Fo @ DCS/PCS port

-

-

-7

-50

0

-20

dBm POUT < 28.5 dBm

Harmonics

Second Harmonic (2Fo)

Third Harmonic (3Fo)

4Fo to 15Fo

-

-40 -20

-

-35 -15 dBm POUT < 28.5 dBm

-

-20 -10

Output Load VSWR = 6:1 All Phases, POUT < 28.5 dBm

Stability (all spurious)

-

-

-36 dBm FOUT < 1 GHz, RBW = 3 MHz

-

-

-30 dBm FOUT > 1 GHz, RBW = 3 MHz

Ruggedness

No Degradation, No Damage

Load VSWR = 10:1, All Phase Angles;

POUT  28.5 dBm

Notes:

(1) VBIAS = High, VBATT = Range (3.2 V  VBATT  4.5 V), Temp = Range (-20 oC  TC  +85 oC).

(2) VBIAS = Low, VBATT = Range (3.2 V  VBATT  4.5 V), Temp = Range (-20 oC  TC  +85 oC).

10

PRELIMINARY DATA SHEET - Rev 1.4

02/2009

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