AWT6172 데이터 시트보기 (PDF) - ANADIGICS

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AWT6172

GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

ANADIGICS 

AWT6172

Table 7: Electrical Characteristics for GSM850 GMSK Mode

Unless otherwise specified: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%,

ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = LOW, TX_EN = HIGH, VMODE = LOW

ParaMeter

MIN tYP MaX uNIt

COMMeNts

Operating Frequency ( Fo ) 824

-

849 MHz

Input Power

0

+2 +4 dBm

Output Power, PMAX

34.5 35.1 -

dBm

Degraded Output Power

PAE @ PMAX

32.5 33.5 -

47 54

-

dBm

%

VBATT = 3.2 V, TC = +85 °C

PIN = 0 dBm

Forward Isolation 1

-

-45 -30 dBm TX_EN = LOW, PIN = +4 dBm

Forward Isolation 2

-

-28

-10

dBm

TX_EN = HIGH, VRAMP = 0.25 V,

PIN = +4 dBm

Cross Isolation

Fo @ DCS/PCS port

-

2Fo, 3Fo @ DCS/PCS port -

-2

+2

dBm POUT  34.5 dBm

-22 -16

Harmonics

Second Harmonic (2Fo)

Third Harmonic (3Fo)

-

-

-21 -10

-20 -10

dBm POUT  34.5 dBm

4Fo to 15Fo

-

-20 -8

Output Load VSWR = 6:1, All Phases POUT  34.5 dBm

Stability (all spurious)

-

-

-36 dBm FOUT < 1 GHz, RBW = 3 MHz

Ruggedness

RX Noise Power

Input Return Loss

-

-

-30 dBm FOUT > 1 GHz, RBW = 3 MHz

No Degradation, No Damage

Load VSWR = 10:1, All Phase Angles;

POUT  34.5 dBm

-

-84

-81

dBm

FTX = 849 MHz, RBW = 100 kHz

FRX = 869 to 894 MHz, POUT < 34.5 dBm

-

- 2.5:1 VSWR

PRELIMINARY DATA SHEET - Rev 1.4

7

02/2009

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