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B0520WS 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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제조사
B0520WS
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
B0520WS Datasheet PDF : 2 Pages
1 2
B0520WS/B0530WS/B0540WS
SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Guard Ring Construction for Transient Protection
z High Conductance
z Also Available in Lead Free Version
MARKING: B0520WS: SD
B0530WS: SE
B0540WS: SF
SOD-323
+
-
-
Maximum Ratings @TA=25
Parameter
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage Reverse voltage (DC)
Average rectified output Current
Forward current surge peak
Power dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Voltage Rate of Change
Symbol
VRRM
VRWM
VR
VR(RMS)
Io
IFSM
PD
RθJA
Tj
TSTG
dv/dt
B0520WS
20
14
B0530WS
30
21
0.5
5.5
200
625
150
-65~+150
1000
B0540WS Unit
40
V
28
V
A
A
mW
/W
V/μS
Electrical Characteristics @TA=25
Parameter
Minimum Reverse
Breakdown Voltage
Forward voltage
Reverse current
Reverse current
Capacitance between terminals
Symbol
V(BR)R
VF1
VF2
VF3
IR1
IR2
IR3
IR4
IR5
CT
B0520WS
20
--
--
0.3
0.385
--
75
--
250
--
--
170
B0530WS
--
30
--
0.36
0.45
--
--
80
100
500
--
170
B0540WS
--
--
40
--
0.510
0.62
--
--
10
--
20
170
Unit
V
V
μA
μA
pF
1 
JinYu
semiconductor
www.htsemi.com
Conditions
IR=250μA
IR=500μA
IR=20μA
IF=0.1A
IF=0.5A
IF=1A
VR=10V
VR=15V
VR=20V
VR=30V
VR=40V
VR=0,f=1MHz
Date:2011/05

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