Philips Semiconductors
Band-switching diodes
Product specification
BA482; BA483; BA484
FEATURES
• Continuous reverse voltage:
max. 35 V
• Continuous forward current:
max. 100 mA
• Low diode capacitance:
max. 1.0 to 1.6 pF
• Low diode forward resistance:
max. 0.7 to 1.2 Ω.
APPLICATION
• VHF television tuners.
DESCRIPTION
Planar high performance band-switching diode in a hermetically sealed glass
SOD68 (DO-34) package.
handbook, halfpkage
a
MAM156
The diodes are type branded.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VR
continuous reverse voltage
IF
continuous forward current
Tstg
storage temperature
Tj
junction temperature
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
BA482
BA483
BA484
rD
diode forward resistance
BA482
BA483
BA484
CONDITIONS
IF = 100 mA; see Fig.2
see Fig.3
VR = 20V
VR = 20 V; Tamb = 75 °C
f = 1 to 100 MHz; VR = 3 V; see Fig.4
IF = 3 mA; f = 200 MHz; see Fig.5
MIN.
−
−
−65
−
MAX.
35
100
+150
150
UNIT
V
mA
°C
°C
TYP.
−
MAX. UNIT
1.2 V
−
100
nA
−
1
µA
0.8
1.2 pF
0.7
1.0 pF
1.0
1.6 pF
0.6
0.7 Ω
0.8
1.2 Ω
0.8
1.2 Ω
1996 Apr 17
2