BA9708K 데이터 시트보기 (PDF) - ROHM Semiconductor
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BA9708K Datasheet PDF : 4 Pages
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AO3409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
9
VDS=-15V
ID=-2.6A
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
-Qg (nC)
Figure 7: Gate-Charge Characteristics
500
400
Ciss
300
200
Coss
100
Crss
0
0
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
370
100.0
TJ(Max)=150°C
TA=25°C
10.0
RDS(ON)
limited
100µs
1ms
10µs
0.1s 10ms
1.0
1s
10s
DC
0.1
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
20
TJ(Max)=11850°C
TA=25°C
15
9
10
5
0
0.001 0.01 0.1
1
10 21200 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Ton
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
Alpha & Omega Semiconductor, Ltd.
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