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BAS170WS-GS18 데이터 시트보기 (PDF) - Vishay Semiconductors
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BAS170WS-GS18
Small Signal Schottky Diode
Vishay Semiconductors
BAS170WS-GS18 Datasheet PDF : 4 Pages
1
2
3
4
BAS170WS
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
I
R
= 10
µ
A (pulsed)
Leakage current
V
R
=50 V
V
R
= 70 V
Forward voltage
I
F
= 200 mA
I<tief<F = 10 mA
Forward voltage
1)
Capacitance
Charge carrier lifetime
Differential forward resistance
I
F
= 15 mA
V
R
= 0 V, f = 1 MHz
I
F
= 25 mA
I
E
= 5 mA, f = 10 kHz
1)
Pulse test; t
p
≤
300
µ
s
VISHAY
Symbol
Min
V
(BR)R
70
I
R
I
R
V
F
V
F
V
F
C
tot
τ
R
F
Typ.
Max
Unit
V
0.1
µ
A
10
µ
A
375
410
V
705
750
V
880
1000
mV
1.5
2
pF
100
ps
34
Ω
www.vishay.com
2
Document Number 85653
Rev. 1.2, 18-Nov-03
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