BAT14-090S 데이터 시트보기 (PDF) - Siemens AG

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BAT14-090S

Silicon Schottky Diodes

Siemens AG 

BBAATT1144- -…...S

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Breakdown voltage

IR = 10 µA

V(BR)

4

Diode capacitance

VR = 0, f = 1 MHz

CT

BAT 14-020 S

–

BAT 14-050 S

–

BAT 14-090 S

–

BAT 14-110 S

–

Forward voltage

IF = 1 mA

IF = 10 mA

VF

BAT 14-020 S

–

BAT 14-050 S

–

BAT 14-090 S

–

BAT 14-110 S

–

BAT 14-020 S

–

BAT 14-050 S

–

BAT 14-090 S

–

BAT 14-110 S

–

Single sideband noise figure

FSSB

FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz

f = 3.0 GHz

BAT 14-020 S

–

f = 6.0 GHz

BAT 14-050 S

–

f = 9.3 GHz

BAT 14-090 S

–

f = 16 GHz

BAT 14-110 S

–

Differential forward resistance

rf

IF = 10 mA

BAT 14-020 S

–

BAT 14-050 S

–

IF = 50 mA

BAT 14-090 S

–

BAT 14-110 S

–

V

–

–

pF

0.30 0.35

0.20 0.25

0.14 0.15

0.10 0.12

V

0.45 –

0.47 –

0.49 –

0.50 –

0.55 –

0.57 –

0.60 –

0.65 –

dB

6.0 –

6.5 –

6.5 –

7.0 –

Ω

3.5 –

4.0 –

7.0 –

10.0 –

Semiconductor Group

2

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