BAT54S2 데이터 시트보기 (PDF) - Cystech Electonics Corp.
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BAT54S2 Datasheet PDF : 4 Pages
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CYStech Electronics Corp.
Absolute Maximum Ratings
Symbol
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
Tamb
Parameter
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Conditions
tp≤1s, δ≤0.5
tp<10ms
Tamb≤25℃
Spec. No. : C302S
Issued Date : 2004.11.26
Revised Date :
Page No. : 2/4
Min Max Unit
-
30 V
- 200 mA
- 300 mA
- 600 mA
- 200 mW
-65 +150 ℃
- 125 ℃
-65 +125 ℃
Characteristics (Ta=25°C, unless otherwise specified)
Parameter
Symbol
Condition
Min. Max. Unit
Reverse Breakdown Voltage
VBR
IR=100µA
30
-
V
VF(1) IF=0.1mA
-
240 mV
VF(2) IF=1mA
-
320 mV
Forward Voltage (Note 1)
VF(3) IF=10mA
-
400 mV
VF(4) IF=30mA
-
500 mV
VF(5) IF=100mA
-
800 mV
Reverse Leakage Current (Note 2)
IR
VR=25V
-
2
µA
Diode Capacitance
Reverse Recovery Time
CD
VR=1V, f=1MHz
-
when switched from IF= 10mA
trr
to IR=10mA; RL=100Ω;
-
measured at IR=1mA
10
pF
5
ns
Notes: 1.pulse test, tp=380µs, duty cycle<2%.
2.pulse test, tp=300µs, duty cycle<2%.
Thermal Characteristics
Symbol
Rth j-a
Parameter
thermal resistance from junction to ambient
Note 1 : Device mounted on a FR-4 PCB
Conditions
note 1
Value
Unit
635
K/W
BAT54S2
CYStek Product Specification
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