BAT86S(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors
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BAT86S Datasheet PDF : 4 Pages
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BAT86S
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Diode capacitance
Test Conditions
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=40V
VR=1V, f=1MHz
Type
Symbol Min Typ Max Unit
VF
300 mV
VF
380 mV
VF
450 mV
VF
600 mV
VF
900 mV
IR
5 mA
CD
8 pF
Characteristics (Tj = 25_C unless otherwise specified)
500
450 VR = 50 V
400
350
PR–Limit
300
@100%VR
250
200
150
RthJA=
100
540K/W
50
PR–Limit
@80%VR
0
25
15827
50
75 100 125 150
Tj – Junction Temperature ( °C )
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
100
10
Tj = 150°C
Tj = 25°C
1
0.1
0
15829
0.5
1.0
1.5
VF – Forward Voltage ( V )
Figure 3. Forward Current vs. Forward Voltage
10000
1000
VR = VRRM
100
10
1
25
15828
50
75 100 125 150
Tj – Junction Temperature ( °C )
Figure 2. Reverse Current vs. Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
0.1
15830
f=1MHz
1.0
10.0
VR – Reverse Voltage ( V )
100.0
Figure 4. Diode Capacitance vs. Reverse Voltage
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2 (4)
Document Number 85514
Rev. A3, 01-Apr-99
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