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BAT86S(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors

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제조사
BAT86S
(Rev.:1999)
Vishay
Vishay Semiconductors Vishay
BAT86S Datasheet PDF : 4 Pages
1 2 3 4
Schottky Barrier Diode
Features
D Integrated protection ring against
static discharge
D Very low forward voltage
BAT86S
Vishay Telefunken
Applications
Applications where a very low forward voltage
is required
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage
Peak forward surge current
tp 10 ms
Repetitive peak forward current tp 1 s
Forward current
Average forward current
Junction temperature
PCB mounting, l=4mm;
VRWM=25V, Tamb=50°C
Storage temperature range
Type
Symbol Value
Unit
VR
50
V
IFSM
5
A
IFRM
500
mA
IF
200
mA
IFAV
200
mA
Tj
125
°C
Tstg –65...+150 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Symbol
Value
Unit
RthJA
320
K/W
Document Number 85514
Rev. 3, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600
1 (4)

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