BAT86S-TAP(2007) 데이터 시트보기 (PDF) - Vishay Semiconductors
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BAT86S-TAP Datasheet PDF : 5 Pages
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BAT86S
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
Reverse current
VR = 40 V
Diode capacitance
VR = 1 V, f = 1 MHz
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
500
450 VR = 50 V
400
350
300
250
200
150
100 RthJA = 540 K/W
50
PR - Limit
at 100 % VR
PR - Limit
at 80 % VR
0
25
50
75 100 125 150
15827
Tj - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
10000
1000
VR = V RRM
100
10
1
25
50
75 100 125 150
15828
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
Symbol
Min
Typ.
Max
Unit
VF
300
mV
VF
380
mV
VF
450
mV
VF
600
mV
VF
900
mV
IR
5
µA
CD
8
pF
1000
100
10
1
Tj = 125 °C
Tj = 25 °C
0.1
0
0.5
1.0
1.5
15829
VF - Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
10
9
f = 1 MHz
8
7
6
5
4
3
2
1
0
0.1
1
10
100
15830
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
www.vishay.com
2
Document Number 85514
Rev. 1.7, 26-Feb-07
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