BAW 79 A
… BAW 79 D
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Breakdown voltage
I(BR) = 100 µA
Forward voltage1)
IF = 1 A
IF = 2 A
Reverse current
VR = VRmax
VR = VRmax, TA = 150 ˚C
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 200 mA, IR = 200 mA,
RL = 100 Ω
measured at IR = 20 mA
BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D
Test circuit for reverse recovery time
Symbol
Values
Unit
min. typ. max.
V(BR)
50
–
100 –
200 –
400 –
VF
–
–
–
–
IR
–
–
–
–
V
–
–
–
–
V
1.6
2
µA
1
50
CD
–
10 –
pF
trr
–
1
–
µs
Pulse generator: tp = 5 µs, D = 0.05
tr = 0.6 ns, Rj = 50 Ω
Oscillograph: R = 50 Ω
tr = 0.35 ns
C ≤ 1 pF
1) Pulse test: tp ≤ 300 µs, D = 2 %.
Semiconductor Group
2