BCR12PM-12LD 데이터 시트보기 (PDF) - Renesas Electronics
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BCR12PM-12LD Datasheet PDF : 8 Pages
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BCR12PM-12LD
Main Characteristics
Maximum On-State Characteristics
102
Tj = 25°C
101
100
10−1
0
1
2
3
4
On-State Voltage (V)
Gate Characteristics (I, II and III)
102
VGM = 10 V
101
PGM = 5 W
VGT = 1.5 V
PG(AV)
= 0.5 W
100
IFGT I
IRGT I
IRGT III
IGM = 2 A
10−1101
102
VGD = 0.2 V
103
104
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
103
Typical Example
102
101
–40 0
40 80 120 160
Junction Temperature (°C)
R07DS0973EJ0100 Rev.1.00
Dec 20, 2012
Preliminary
Rated Surge On-State Current
100
80
60
40
20
0
100
101
102
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
103
Typical Example
IRGT III
102
IFGT I
IRGT I
101
–40 0
40 80 120 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
5
4
3
2
1
0
10−1
100
101
102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
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