BCR3PM-12LB 데이터 시트보기 (PDF) - Renesas Electronics
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BCR3PM-12LB
Renesas Electronics
BCR3PM-12LB Datasheet PDF : 8 Pages
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BCR3PM-12LB
Latching Current vs.
Junction Temperature
103
7
5
Distribution
3
2
T2+, G–
102
Typical Example
7
5
3
2
101
7
5
3
2
100
T2+, G+
T2–, G–
Typical Example
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
Tj = 125°C
120
100
III Quadrant
80
60
I Quadrant
40
20
0101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
7
5 Main Voltage
(dv/dt)c
3
Main Current
IT
2
τ
101
7
5
Time
VD
(di/dt)c
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
3 Minimum
2
Characteristics
Value
III Quadrant
100
7100
I Quadrant
2 3 5 7 101
2 3 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Preliminary
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140
Tj = 150°C
120
100
III Quadrant
80
60
I Quadrant
40
20
0101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
7
5 Main Voltage
(dv/dt)c
3
Main Current
IT
2
τ
101
Time Typical Example
VD Tj = 150°C
(di/dt)c IT = 4A
τ = 500μs
Time VD = 200V
f = 3Hz
7
III Quadrant
5
3
2
100
7100
23
I Quadrant
Minimum
Characteristics
Value
5 7 101 2 3 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0098EJ0300 Rev.3.00
Sep 13, 2010
Page 5 of 7
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