BCR16PM-16LH 데이터 시트보기 (PDF) - Renesas Electronics

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BCR16PM-16LH

Isolated Triac 16 Amperes/400-600 Volts

Renesas Electronics 

BCR16PM-16LH

Preliminary

Electrical Characteristics

Parameter

Repetitive peak off-state current

Symbol

IDRM

BCR16PM-16LH-1

(IGT item : 1)

Min. Typ. Max.

— — 5.0

On-state voltage

VTM

—

— 1.5

Gate trigger voltageNote2

Gate trigger curentNote2



VFGT

—



VRGT

—

 VRGT —



IFGT

—



IRGT

—

 IRGT

—

— 1.5

— 1.5

— 1.5

— 35

— 35

— 35

BCR16PM-16LH

Unit Test conditions

Min. Typ. Max.

— — 5.0 mA Tj = 150C

VDRM applied

—

— 1.5 V Tc = 25C, ITM = 25 A

instantaneous

measurement

—

—

1.5 V Tj = 25C, VD = 6 V

—

—

1.5

V RL = 6 , RG = 330 

— — 1.5 V

—

—

50 mA Tj = 25C, VD = 6 V

—

—

50 mA RL = 6 , RG = 330 

— — 50 mA

Gate non-trigger voltage

VGD

0.2

—

—

0.2

—

—

V Tj = 125C

VD = 1/2 VDRM

0.1 —

— 0.1 —

—

V Tj = 150C

Thermal resistance

VD = 1/2 VDRM

Rth (j-c)

—

— 3.5

—

—

3.5 C/W Junction to caseNote3

Critical-rate of decay of on-state (di/dt)c 9

commutating current Note4

—

—

15

—

— A/ms Tj = 125C

(dv/dt)c < 100 V/s

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.

4. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.

Test conditions

1. Junction temperature

Tj = 125C

2. Peak off-state voltage

VD = 400 V

2. Rate of rise of off-state commutating voltage

(dv/dt)c < 100 V/s

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

Time

VD

R07DS0505EJ0100 Rev.1.00

Jul 07, 2011

Page 2 of 7

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