BCV62 데이터 시트보기 (PDF) - Infineon Technologies

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BCV62

PNP Silicon Double Transistor

Infineon Technologies 

BCV62

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics of T1

Collector-emitter breakdown voltage

V(BR)CEO 30

-

-V

IC = 10 mA, IB = 0

Collector-base breakdown voltage

V(BR)CBO 30

-

-

IC = 10 µA, IE = 0

Emitter-base breakdown voltage

V(BR)EBO 6

-

-

IE = 10 µA, IC = 0

Collector cutoff current

ICBO

-

-

15 nA

VCB = 30 V, IE = 0

Collector cutoff current

ICBO

-

-

5 µA

VCB = 30 V, IE = 0 , TA = 150 °C

DC current gain 1)

hFE

100 -

--

IC = 0.1 mA, VCE = 5 V

DC current gain 1)

IC = 2 mA, VCE = 5 V

hFE

BCV62A

BCV62B

125 180 220

220 290 475

BCV62C

420 520 800

Collector-emitter saturation voltage1)

VCEsat

mV

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

-

75 300

- 250 650

Base-emitter saturation voltage 1)

VBEsat

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

-

700

-

-

850

-

Base-emitter voltage 1)

VBE(ON)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

600 650 750

-

- 820

1) Pulse test: t ≤ 300µs, D = 2%

2

2007-04-20

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