BCW66 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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BCW66 Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
NPN General Purpose Amplifier
BCW65/66
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
BCW65
BCW66
Collector-emitter breakdown voltage
BCW65
BCW66
V(BR)CBO
V(BR)CEO
Emitter-base breakdown voltage
Collector cut-off current
BCW65
BCW66
V(BR)EBO
ICBO
Emitter cut-off current
IEBO
DC current gain
A/F
B/G hFE
C/H
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=10μA IE=0
60
75
IC=10mA IB=B 0
32
45
IE=10μA IC=0
5
VCB=32V IE=0
VCB=45V IE=0
VEB=4V IC=0
100
VCE=5V IC=2mA
160
250
IC=100mA IB=B 10mA
IC=500mA IB=B 50mA
IC=100mA IB=B 10mA
IC=500mA IB=B 50mA
VCE=5V IC=50mA 170
f=20MHz
V
V
V
20
nA
20
20 nA
250
400
630
0.3
V
0.7
1.25
V
2
MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC106
Rev.A
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