BD131 데이터 시트보기 (PDF) - Comset Semiconductors

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BD131

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

Comset Semiconductors 

PNP BD132

NPN BD131

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

-ICBO

-IEBO

-VCE(SAT)

-VBE(SAT)

hFE

Collector cut-off current

Emitter cut-offcurrent

IE=0 , -VCB=40 V

IE=0 , -VCB=40 V ,Tj= 150°C

IC=0, -VEB=3 V

Collector-Emitter saturation

Voltage

Base-Emitter saturation

Voltage

DC Current Gain

-IC=0.5 A, -IB=50 mA

-IC=2.0 A, -IB=200 mA

-IC=0.5 A, -IB=50 mA

-IC=2.0 A, -IB=200 mA

-VCE=12 V, -IC=500m A

-VCE=1 V, -IC=2 A

Min Typ Mx Unit

-

-

5 µA

- - 500

- - 5 µA

-

-

- 0.3

- 1.2

V

-

-

- 0.7

- 1,5

V

40 - -

20 - -

DIMENSIONS

MECHANICAL DATA CASE TO-126

mm

inches

min

max

min

max

A

7.4

7.8

0.295 0.307

B

10.5

10.8 0.413 0.425

C

2.4

2.7

0.094 0.106

D

0.7

0.9

0.027 0.035

E

2.2 typ.

0.087 typ.

F

0.49

0.75 0.019 0.029

G

4.4 typ.

0.173 typ.

H

2.54 typ.

0.100 typ.

L

15.7 typ.

0.618 typ.

M

1.2 typ.

0.047 typ.

N

3.8 typ.

0.149 typ.

P

3.0

3.2

0.118 0.126

Pin 1 :

Pin 2 :

Case :

Emitter

Collector

Base

COMSET SEMICONDUCTORS

2

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