BD434 데이터 시트보기 (PDF) - Fairchild Semiconductor
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BD434 Datasheet PDF : 8 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
VCEO(sus)
Collector-Emitter Sustaining Voltage
: BD434
IC = - 100mA, IB = 0
- 22
V
: BD436
- 32
V
: BD438
- 45
V
ICBO
Collector Cut-off Current
: BD434
: BD436
: BD438
VCB = - 22V, IE = 0
VCB = - 32V, IE = 0
VCB = - 45V, IE = 0
- 100 µA
- 100 µA
- 100 µA
ICEO
IEBO
hFE
Collector Cut-off Current
: BD434
: BD436
: BD438
Emitter Cut-off Current
* DC Current Gain
: BD434/436
: BD438
: ALL DEVICE
: BD434/436
: BD438
VCE = - 22V, VBE = 0
VCE = - 32V, VBE = 0
VCE = - 45V, VBE = 0
VEB = - 5V, IC = 0
- 100 µA
- 100 µA
- 100 µA
- 1 mA
VCE = - 5V, IC = - 10mA
40 140
30 140
VCE = - 1V, IC = - 500mA 85 140
VCE = - 1V, IC = - 2A
50
40
VCE(sat)
* Collector-Emitter Saturation Voltage
: BD434
: BD436
: BD438
IC = - 2A, IB = - 0.2A
- 0.2 - 0.5 V
- 0.2 - 0.5 V
- 0.2 - 0.6 V
VBE(on)
* Base-Emitter ON Voltage
: BD434
: BD436
: BD438
VCE = - 1V, IC = - 2A
- 1.1 V
- 1.1 V
- 1.2 V
fT
Current Gain Bandwidth Product
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
VCE = - 1V, IC = - 250mA 3
MHz
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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