BD501B 데이터 시트보기 (PDF) - Inchange Semiconductor
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BD501B Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD501/B
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 50V(Min)
80V(Min)
·High Power Dissipation
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD501
55
VCBO
Collector-Base Voltage
V
BD501B
85
BD501
50
VCEO
Collector-Emitter Voltage
V
BD501B
80
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
10
A
75
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.39 ℃/W
isc Website：www.iscsemi.cn
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