BD501B 데이터 시트보기 (PDF) - Inchange Semiconductor

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BD501B

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

BD501/B

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BD501

BD501B

IC= 30mA ;IB=B 0

VCE(sat)

Collector-Emitter

Saturation Voltage

BD501 IC= 5A; IB=B 0.5A

BD501B IC= 3.5A; IB= 0.35A

VBE(on)

Base-Emitter On Voltage

BD501

BD501B

IC= 5A; VCE= 4V

IC= 3.5A; VCE= 4V

ICBO

Collector Cutoff Current

VCB= 55V;IE= 0

VCB= 85V;IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

BD501

IC= 5A; VCE= 4V

BD501B IC= 3.5A; VCE= 4V

fT

Current-Gain—Bandwidth Product IC= 1.0A ; VCE= 10V

MIN TYP. MAX UNIT

50

V

80

1.0

V

1.6

V

1.0 mA

1.0 mA

15

90

8

MHz

isc Website：www.iscsemi.cn

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